MASK DEPENDENT ETCH RATES .2. THE EFFECT OF ALUMINUM VS PHOTORESIST MASKING ON THE ETCH RATES OF SILICON AND SILICON DIOXIDE IN FLUORINE CONTAINING PLASMAS

被引：21

作者：

FEDYNYSHYN, TH ^{[1
]}

GRYNKEWICH, GW ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 10期

关键词：

ALUMINUM TRIFLUORIDE - FLUORINE CONTAINING PLASMAS - MASK DEPENDENT ETCH RATES - PHOTORESIST MASKING;

D O I：

10.1149/1.2100246

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Edited Abstract)

引用

页码：2580 / 2585

页数：6

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