ESR SIGNATURES OF DEFECTS NEAR SI-SIO2 INTERFACE

被引：3
|
作者：
POINDEXTER, EH [1 ]
HELBERT, JN [1 ]
WAGNER, BE [1 ]
CAPLAN, PJ [1 ]
机构：
[1] USA,ELECTR COMMAND,FT MONMOUTH,NJ 07703
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期
关键词：
D O I：
10.1109/T-ED.1977.18979
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1217 / 1217
页数：1
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