ESR SIGNATURES OF DEFECTS NEAR SI-SIO2 INTERFACE

被引：3

作者：

POINDEXTER, EH ^{[1
]}

HELBERT, JN ^{[1
]}

WAGNER, BE ^{[1
]}

CAPLAN, PJ ^{[1
]}

机构：

[1] USA,ELECTR COMMAND,FT MONMOUTH,NJ 07703

来源：

关键词：

D O I：

10.1109/T-ED.1977.18979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1217 / 1217

页数：1

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