AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES

被引：1379
作者：
TERMAN, LM
机构：
来源：
SOLID-STATE ELECTRONICS | 1962年 / 5卷 / SEP-O期
关键词：
D O I：
10.1016/0038-1101(62)90111-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：285 / 299
页数：15
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