AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES

被引：1371

作者：

TERMAN, LM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(62)90111-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 299

页数：15

共 11 条

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[3] HARTEN HU, 1961, Z NATURFORSCH PT A, V16, P459
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[7] CROSS SECTIONS OF MIDGAP SURFACE STATES IN SILICON BY PULSED FIELD EFFECT EXPERIMENT
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 208 - 213
[8] SCHOCKLEY W, 1939, PHYS REV, V56, P317
[9] STATZ, 1956, PHYS REV, V101, P1272
[10] SURFACE STATES ON SILICON AND GERMANIUM SURFACES
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