3-DIMENSIONAL STRUCTURIZATION BY ADDITIVE LITHOGRAPHY, ANALYSIS OF DEPOSITS USING TEM AND EDX, AND APPLICATION TO FIELD-EMITTER TIPS

被引：40

作者：

KRETZ, J

RUDOLPH, M

WEBER, M

KOOPS, HWP

机构：

[1] Institut für Angewandte Physik der Technischen Hochschule Darmstadt, D-64289 Darmstadt

[2] Forschungszentrum der Telekom, D-64295 Darmstadt

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

741.3 Optical Devices and Systems - 745.1 Printing - 801.4 Physical Chemistry - 802.2 Chemical Reactions - 813.1 Coating Techniques - 932.1 High Energy Physics;

D O I：

10.1016/0167-9317(94)90199-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron-beam induced deposition opens a new field of lithographic structures with nanometer scale. Three-dimensional structures are presented, which are obtained with a field-emission scanning electron microscope dedicated to deposition. The resolution of 15 nm with edge corrugations of 2 nm proves the superior quality of electron-beam induced deposition compared to conventional lithography techniques. Analysis of the deposited material is carried out by means of EDX and TEM studies. The electrical properties are investigated by resistance measurements of beam shapes deposited between gold pads. Adjusting the power of the beam allows controlling the specific resistivity of the deposited material down to 10(-2) Omega cm. Tips deposited from Dimethyl-gold-trifluoro-acetylacetonate positioned 0.5 mu m from an extractor structure show field emission starting at a voltage of 10 V with currents up to 850 mu A at 25 V.

引用

页码：477 / 481

页数：5

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