QUANTUM SIZE EFFECT OF EXCITONIC BAND-EDGE LUMINESCENCE IN STRAINED SI1-XGEX/SI SINGLE QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY

被引：28

作者：

FUKATSU, S ^{[1
]}

YOSHIDA, H ^{[1
]}

USAMI, N ^{[1
]}

FUJIWARA, A ^{[1
]}

TAKAHASHI, Y ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO, FAC ENGN, DEPT APPL PHYS, BUNKYO KU, TOKYO 153, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9B期

关键词：

STRAINED SI1-XGEX/SI SINGLE QUANTUM WELL; QUANTUM SIZE EFFECT; BAND-EDGE PHOTOLUMINESCENCE; EXCITONIC TRANSITION; GAS-SOURCE SI MOLECULAR BEAM EPITAXY;

D O I：

10.1143/JJAP.31.L1319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained SiGe/Si single quantum well structures were successfully grown by gas-source molecular beam epitaxy using disilane and germane. Quantum confined excitonic transitions of band-edge states dominated low-temperature photoluminescence (PL) spectra. The temperature dependence of PL intensity was in agreement with type-I quantum well formation. The quantum size effect was evidenced in these structures by the fact that the transition energy increased with decreasing well width.

引用

页码：L1319 / L1321

页数：3

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