HALL STUDY OF SILICON LAYERS DOPED WITH PHOSPHORUS AND BORON BY ION IMPLANTATION

被引：2
|
作者：
ZORIN, EI
PAVLOV, PV
TETELBAU.DI
KHOKHLOV, AF
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 6卷 / 01期
关键词：
D O I：
10.1002/pssa.2210060138
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：337 / +
页数：1
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