HALL STUDY OF SILICON LAYERS DOPED WITH PHOSPHORUS AND BORON BY ION IMPLANTATION

被引：2

|

作者：

ZORIN, EI

PAVLOV, PV

TETELBAU.DI

KHOKHLOV, AF

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 6卷 / 01期

关键词：

D O I：

10.1002/pssa.2210060138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：337 / +

页数：1

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