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- [2] SI/SIO2 INTERFACES FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2 ON PLASMA-PROCESSED SI SUBSTRATES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 781 - 787
- [4] Kinetics investigation of remote plasma-enhanced chemical vapor deposition of SiO2 PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 177 - 182
- [5] PROPERTIES OF INTRINSIC AND DOPED A-SI-H DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1912 - 1916
- [7] SUBSTRATE-TEMPERATURE DEPENDENCE OF SUBCUTANEOUS OXIDATION AT SI/SIO2 INTERFACES FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2039 - 2045
- [8] ATOMIC-STRUCTURE IN SIO2 THIN-FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1136 - 1144
- [9] FORMATION OF DEVICE QUALITY SI SIO2 INTERFACES AT LOW SUBSTRATE TEMPERATURES BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SIO2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 822 - 831