THERMAL-OXIDATION KINETICS OF SILICON IN PYROGENIC H2O AND 5-PERCENT HCL-H2O MIXTURES

被引:92
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DEAL, BE
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D O I
10.1149/1.2131502
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:576 / 579
页数:4
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共 18 条
[1]   STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].
ATALLA, MM ;
TANNENBAUM, E ;
SCHEIBNER, EJ .
BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783
[2]  
Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363
[3]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[4]   KINETICS OF THERMAL-OXIDATION OF SILICON IN O2/H2O AND O2/CL2 MIXTURES [J].
DEAL, BE ;
HESS, DW ;
PLUMMER, JD ;
HO, CP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :339-346
[5]   RATES OF FORMATION OF THERMAL OXIDES OF SILICON [J].
EVITTS, HC ;
COOPER, HW ;
FLASCHEN, SS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) :688-690
[6]   SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].
FROSCH, CJ ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552
[7]   KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES [J].
HESS, DW ;
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) :735-739
[8]   KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].
HIRABAYA.K ;
IWAMURA, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1595-1601
[9]   EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].
KRIEGLER, RJ ;
CHENG, YC ;
COLTON, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :388-&
[10]  
KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466