Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process

Nano-carbons such as carbon nanotubes and graphenes are very promising as next-generation materials, and field effect transistors (FETs) can be used with nano-carbon channels. In these nano-carbon materials, carbon nanowalls (CNWs) are constructed with a few layers of graphene and exhibit properties similar to those of graphene. We have developed a self-aligned process for CNWs using grapho-epitaxy. We have grown CNW channels on several line and space patterns fabricated by electron beam lithography and reactive ion etching. When the line and space pattern is suitable, self-aligned CNWs can be made by plasma-enhanced CVD. We also discuss the electrical properties (IDs-Vps characteristics) of the self-aligned CNW-FETs resulting from several growth temperatures and deposition times.