GAS-SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH, CHARACTERIZATION, AND LIGHT-EMITTING DIODE APPLICATION OF IN(X)GA(1-X)P ON GAP(100)

被引：28

作者：

CHIN, TP ^{[1
]}

CHANG, JCP ^{[1
]}

KAVANAGH, KL ^{[1
]}

TU, CW ^{[1
]}

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly lattice-mismatched InxGa1-xP (x less-than-or-equal-to 0.38) layers were grown on GaP substrates by gas-source molecular beam epitaxy. A relatively thin, compositionally linear-graded buffer layer was used to reduce the number of threading dislocations. Studies by double-crystal x-ray diffraction and transmission electron microscopy show this buffer layer to be 97% strain-relaxed along both [110] directions with dislocations well confined within the graded buffer and the substrate. Threading dislocation densities in the top layers were less than 1X10(7) cm-2. Room-temperature photoluminescence, ranging from 560 to 600 nm, is achieved. Heterojunction p-i-n diodes emitting at 560 nm at 300 K exhibit good rectifying and reverse breakdown characteristics.

引用

页码：2369 / 2371

页数：3

共 14 条

[1]

Chang J., UNPUB

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