GROWTH AND CHARACTERIZATION OF METAL-ORGANIC VAPOR-PHASE EPITAXIAL GA1-XINXASYSB1-Y QUATERNARY LAYERS

被引：17

作者：

GIANI, A

BOUGNOT, J

PASCALDELANNOY, F

BOUGNOT, G

KAOUKAB, J

ALLOGHO, GG

BOW, M

机构：

[1] Centre d'Electronique de Montpellier (URA 391 du CNRS), Université Montpellier II-Sciences et Techniques du Languedoc, F-34095 Montpellier Cédex 05, Place E. Bataillon

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90159-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth in the miscibility gap and the characterization of MOVPE Ga1-xIn(x)As(y)Sb1-y quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched layers, in varying SIGMA-P(III) and D(H-2). The material quality has been assessed by single and double X-ray diffraction. The spectral responses of GaInAsSb(p)/GaSb(n) heterojunction are given. A spectral response obtained under illumination from the GaSb side, presents a good response at 2.75-mu-m.

引用

页码：121 / 124

页数：4