DLTS MEASUREMENTS OF SEMI-INSULATING GAAS ION-IMPLANTED WITH SIFX+ AFTER CAPLESS ANNEALING

被引：0

作者：

RANSOM, CM ^{[1
]}

CHAPPELL, TI ^{[1
]}

RUPPRECHT, HS ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：222 / 222

页数：1

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