ULTRAFAST ELECTRONIC DISORDERING DURING FEMTOSECOND LASER MELTING OF GAAS

被引：207

作者：

SAETA, P

WANG, JK

SIEGAL, Y

BLOEMBERGEN, N

MAZUR, E

机构：

[1] Gordon McKay Laboratory, Harvard University, Cambridge

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.67.1023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed an ultrarapid electronic phase transformation to a centrosymmetric electronic state during laser excitation of GaAs with intense femtosecond pulses. Reflection second-harmonic intensity from the upper 90 atomic layers vanishes within 100 fs; reflectivity rises within 0.5 ps to a steady value characteristic of a metallic molten phase, long before phonon emission can heat the lattice to the melting temperature.

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页码：1023 / 1026

页数：4

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