共 50 条
- [1] TEMPERATURE-DEPENDENCE OF THE MOBILITY OF ELECTRONS IN COMPENSATED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02): : 130 - 133
- [2] TEMPERATURE-DEPENDENCE OF THE ABSORPTION OF MILLIMETER RADIATION IN N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 492 - 494
- [3] ABSORPTION OF SUBMILLIMETER AND MILLIMETER RADIATION IN COMPENSATED P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 947 - 948
- [4] TEMPERATURE-DEPENDENCE OF THE HALL-MOBILITY IN GERMANIUM COMPENSATED WITH AU AND SB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 239 - 241
- [5] TEMPERATURE-DEPENDENCE OF THE EFFICIENCY OF FORMATION OF RADIATION DEFECTS IN SILICON AND GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (08): : 931 - 933
- [6] TEMPERATURE-DEPENDENCE OF CHANGE IN CONDUCTIVITY DUE TO ABSORPTION OF MICROWAVE RADIATION IN COMPENSATED PARA-TYPE GE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1182 - 1183
- [7] ANISOTROPY OF ABSORPTION OF SUBMILLIMETER AND MILLIMETER RADIATION IN COMPENSATED N-TYPE GERMANIUM SUBJECTED TO UNIAXIAL COMPRESSION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 703 - 704
- [8] TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF GERMANIUM PHYSICAL REVIEW B, 1984, 30 (04): : 1979 - 1991
- [9] TEMPERATURE-DEPENDENCE OF THE LIFETIME IN PURE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 688 - 689
- [10] ABSORPTION OF SUBMILLIMETER RADIATION BY BERYLLIUM-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (10): : 1198 - 1199