TEMPERATURE-DEPENDENCE OF THE ABSORPTION OF SUBMILLIMETER RADIATION IN COMPENSATED GERMANIUM

被引：0

作者：

VAVILOV, VS

KAZANSKII, AG

KOSHELEV, OG

PLESKACHEVA, TB

SAPTSIN, VM

TSIKUNOV, AV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1122 / 1124

页数：3

共 11 条

[1] THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON + GERMANIUM
BLINOWSKI, J
MYCIELSKI, J
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (1A): : A266 - &
[2] THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON AND GERMANIUM .2.
BLINOWSKI, J
MYCIELSK.J
[J]. PHYSICAL REVIEW, 1965, 140 (3A): : 1024 - +
[3] COMPENSATION DEPENDENCE OF IMPURITY CONDUCTION IN ANTIMONY-DOPED GERMANIUM
DAVIS, EA
COMPTON, WD
[J]. PHYSICAL REVIEW, 1965, 140 (6A): : 2183 - &
[4] DEMESHINA AI, 1970, SOV PHYS SEMICOND+, V4, P363
[5] Golant M.B., 1969, PRIB TEKHN EKSPER, P231
[6] GOLTSMAN GN, 1972, PRIB TEKH EKSP, P136
[7] THEORY OF HOPPING ABSORPTION OF ELECTROMAGNETIC RADIATION IN PARA-TYPE GERMANIUM AND SILICON
KACZMAREK, E
GORTEL, ZW
[J]. PHYSICAL REVIEW B, 1974, 10 (06) : 2535 - 2543
[8] FAR-INFRARED ABSORPTION IN N-TYPE SILICON DUE TO PHOTON-INDUCED HOPPING
MILWARD, RC
NEURINGE.LJ
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 664 - &
[9] IMPURITY CONDUCTION IN P-TYPE SILICON AT MICROWAVE FREQUENCIES
TANAKA, S
FAN, HY
[J]. PHYSICAL REVIEW, 1963, 132 (04): : 1516 - &
[10] YANOVSKII MS, 1974, IZV VYSSH UCHEBN ZAV, V17, P47