MINIMUM AL0.5GA0.5AS-GAAS HETEROJUNCTION WIDTH DETERMINED BY SPUTTER-AUGER TECHNIQUES

被引：8

作者：

GARNER, CM

SU, CY

SPICER, WE

EDWOOD, PD

MILLER, D

HARRIS, JS

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two intimately connected parameters are investigated: the abruptness of MBE heterojunctions and the minimum depth resolution of the sputter-Auger technique. Using 250-eV Ar+ ions and monitoring the Al LVV Auger transition, the sharpest interface measured to date (13-15 Å) is obtained. After correcting for the electron escape depth, a minimum interface width of 9 Å is obtained. Large increases in interface broadening with increasing Ar+ ion energies are observed.

引用

页码：610 / 611

页数：2

共 6 条

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[2]

DEMIER PD, 1977, B AM PHYS SOC, V22, P293

[3]

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PHYSICAL REVIEW B, 1978, 18 (06) :2792-2806

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