VERY HIGH TIN DOPING OF GA0.47IN0.53AS BY MOLECULAR-BEAM EPITAXY

被引:9
作者
PANISH, MB
HAMM, RA
HOPKINS, LC
CHU, SNG
机构
关键词
D O I
10.1063/1.102542
中图分类号
O59 [应用物理学];
学科分类号
摘要
The incorporation of Sn into Ga0.47In0.53As grown at 450°C by hydride source molecular beam epitaxy at concentrations ranging from about 3×1018 to 1×1021 Sn/cm3 has been investigated. Sn is a well behaved donor to about n=1020 cm-3, although increasing compensation is noted with increasing doping. At total concentrations beyond about 1020 cm -3 added Sn is not electrically active although the epitaxial quality remains high without noticeable morphology changes, defects, or precipitates, to at least 1021 Sn/cm3.
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页码:1137 / 1139
页数:3
相关论文
共 15 条
[1]   SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].
CHEN, YK ;
NOTTENBURG, RN ;
PANISH, MB ;
HAMM, RA ;
HUMPHREY, DA .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269
[2]   IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735
[3]   ULTRAHIGH BE DOPING OF GA0.47IN0.53AS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].
HAMM, RA ;
PANISH, MB ;
NOTTENBURG, RN ;
CHEN, YK ;
HUMPHREY, DA .
APPLIED PHYSICS LETTERS, 1989, 54 (25) :2586-2588
[4]  
HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[5]  
HULTGREN R, 1963, SELECTED VALUES THER, P264
[6]   SN DOPING FOR INP AND INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TETRAETHYLTIN [J].
KAWAGUCHI, Y ;
NAKASHIMA, K .
JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :181-184
[7]  
PANISH MB, 1989, ANNU REV MATER SCI, V19, P209
[9]  
PANISH MB, UNPUB
[10]  
PINZONE CJ, UNPUB