X-RAY-MICROANALYSIS OF INGAAS/INP MULTILAYER STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

MCGIBBON, AJ ^{[1
]}

CHAPMAN, JN ^{[1
]}

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

BASS, SJ ^{[1
]}

TAYLOR, LL ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2293 / 2299

页数：7

共 17 条

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[2]

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[4] UNDERSTANDING THIN-FILM X-RAY-SPECTRA [J].

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[5]

CHAPMAN JN, 1987, MICROSCPY SEMICONDUC, V87, P649

[6] THE PREPARATION OF TRANSMISSION ELECTRON-MICROSCOPE SPECIMENS FROM COMPOUND SEMICONDUCTORS BY ION MILLING [J].

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[7]

CHEW NG, 1987, MICROSCOPY SEMICONDU, V87, P231

[8] ION-BEAM CRYSTALLOGRAPHY OF INGAAS EPITAXIAL LAYERS ON INP SUBSTRATES [J].

COLE, JM ;

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CHEW, NG ;

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JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2639-2641

[9]

GLAS F, 1986, THESIS U PARIS SUD

[10]

Goldstein JI, 1977, SCANNING ELECTRON MI, V1, P315

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