ELECTRON TRAPPING STATES IN PHOSPHORS

被引：2

作者：

ELLICKSON, RT

机构：

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA | 1953年 / 43卷 / 03期

关键词：

D O I：

10.1364/JOSA.43.000196

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：196 / 197

页数：2

共 13 条

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[3]

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[5]

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Moeglich, F. ;

Rompe, R. .

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[8]

MOTT NF, 1940, ELECTRONIC PROCESSES, P161

[9] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

[10] TEMPERATURE DEPENDENCE OF ELECTRON ENERGY LEVELS IN SOLIDS [J].

RADKOWSKY, A .

PHYSICAL REVIEW, 1948, 73 (07) :749-761

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