Organic Static Induction Transistors with Nano-Hole Arrays Fabricated by Colloidal Lithography

Organic static induction transistors (SITs) with nano-hole arrays in a lateral direction was fabricated using a 'colloidal lithography' technique. Positively charged polystyrene particles of 200 nm diameter as a deposition mask were adsorbed on a glass surface via electrostatic self assembly. A source electrode, a bottom CuPc layer, and a Schottky gate electrode were deposited succeedingly on the particle-adsorbed glass substrate. After the particles were removed, a large number of nano-holes were formed without destroying the films. A top CuPc layer and a top drain electrode were deposited on the nano-hole layers to complete the SIT, where the nano-holes work in parallel as active conducting channels. The obtained SIT characteristics showed that the source-drain current is modulated by a positive gate bias.