BEHAVIOR OF DISLOCATIONS IN SILICON SEMICONDUCTOR DEVICES - DIFFUSION ELECTRICAL

被引：29

作者：

LAWRENCE, JE

机构：

来源：

关键词：

D O I：

10.1149/1.2411449

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：860 / &

共 29 条

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[2]

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[3]

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CELLI, V ;

GOLD, A ;

THOMSON, R .

[6] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

PEARSON, GL .

[7]

Cottrell A H, 1953, DISLOCATIONS PLASTIC, P134

[8]

FLETCHER RC, 1953, PHYS REV, V92, P591

[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

[10]

GIBSON AF, 1960, PROGRESS SEMICOND ED, V4