OXIDATION BEHAVIOR OF SILICON YTTRIUM OXYNITRIDE

被引:12
作者
VEYRET, JB [1 ]
VANDEVOORDE, M [1 ]
BILLY, M [1 ]
机构
[1] UNIV LIMOGES,CERAM NOUVELLES LAB,F-87100 LIMOGES,FRANCE
关键词
D O I
10.1111/j.1151-2916.1992.tb04423.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The oxidation behavior of the silicon yttrium oxynitride Y10Si7O23N4, so-called H-phase, in the temperature range 700-1400-degrees-C has been investigated. A nitrogen retention phenomenon in the oxidation product Y4,67(SiO4)3O (O-apatite) is discussed. The H-phase is one of the four quaternary compounds identified in hot-pressed Si3N4 materials fabricated within the Si3N4-SiO2-Y2O3 pseudoternary system.
引用
收藏
页码:3289 / 3292
页数:4
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