INFLUENCE OF ATOMIC-HYDROGEN ON THE LIFETIME OF NONEQUILIBRIUM CARRIERS IN INDIUM-ANTIMONIDE

被引：0

作者：

LETENKO, DG

MOLODTSOVA, EV

PAKHOMOV, AV

POLYAKOV, AY

POPKOV, AN

FEDORTSOV, AB

CHURKIN, YV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 12期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of atomic hydrogen on the recombination activity of defects in indium antimonide was investigated by a contactless interference method which yielded the lifetime of nonequilibrium carriers. A considerable (eightfold) increase in the lifetime was observed in the surface layers of hydrogenated n-type InSb. A very high (compared with other semiconductors) rate of diffusion of hydrogen in InSb was observed.

引用

页码：1283 / 1284

页数：2

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