DEFECT-POOL MODEL PARAMETERS FOR AMORPHOUS-SILICON DERIVED FROM FIELD-EFFECT MEASUREMENTS

被引：0

作者：

DEANE, SC

POWELL, MJ

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷

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中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Field-effect conductance measurements are analysed using a new defect-pool model and an energy-dependent density of states for amorphous silicon is derived. We determine the key defect-pool parameters and in particular we find that the energy separation (Delta) between the D- states in n-type a-Si:H and the D+ states in p-type a-Si:H is 0.44 eV. This result implies that the equilibrium density of states in bulk intrinsic amorphous silicon must contain about four times more charged defects than neutral defects.

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页码：323 / 326

页数：4

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