LOW-PRESSURE SILICON EPITAXY

被引：27
作者：
KRULLMANN, E [1 ]
ENGL, WL [1 ]
机构：
[1] RHEIN WESTFAL TH AACHEN,INST THEORET ELEKTROTECHN,D-5100 AACHEN,FED REP GER
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期
关键词：
D O I：
10.1109/T-ED.1982.20731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：491 / 497
页数：7
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