LOW-PRESSURE SILICON EPITAXY

被引：27

作者：

KRULLMANN, E ^{[1
]}

ENGL, WL ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST THEORET ELEKTROTECHN,D-5100 AACHEN,FED REP GER

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 497

页数：7

共 50 条

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