TYPE-I TYPE-II BAND-OFFSET TRANSITION OF THE ZNMGSE-ZNTE SYSTEM

被引:29
作者
FERREIRA, SO [1 ]
SITTER, H [1 ]
FASCHINGER, W [1 ]
KRUMP, R [1 ]
BRUNTHALER, G [1 ]
机构
[1] JOHANNES KEPLER UNIV,INST HALBLEITERPHYS,A-4040 LINZ,AUSTRIA
关键词
D O I
10.1016/0022-0248(94)00495-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The valence band offset between ZnMgSe and ZnTe is studied as a function of the Mg content. The band alignment was deduced from photoluminescence measurements on multi-quantum-well structures consisting of alternated layers of Zn1-xMgxSe and ZnTe. The thickness of each layer was 100 Angstrom to reduce errors due to strain or confinement in the wells. We measured a valence band offset of 880 meV between ZnSe and ZnTe and observed a transition from a type II to type I line-up in the ZnMgSe-ZnTe system for a Mg concentration of about 60%. Our results indicate that the increase in bandgap caused by the addition of Mg to ZnSe changes only the position of the conduction band edge, while the valence band remains constant with respect to the vacuum level.
引用
收藏
页码:418 / 421
页数:4
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