METHOD OF FORMING THIN AND HIGHLY RELIABLE GATE OXIDES - 2 STEP HCL OXIDATION

被引：21

作者：

HASHIMOTO, C

MURAMOTO, S

SHIONO, N

NAKAJIMA, O

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 01期

关键词：

D O I：

10.1149/1.2129602

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：129 / 135

页数：7

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