ON THE THEORY OF HOPPING CONDUCTION IN BETA-RHOMBOHEDRAL BORON IN A STRONG ELECTRIC-FIELD

被引：7

作者：

BEREZIN, AA

机构：

来源：

JOURNAL OF THE LESS-COMMON METALS | 1981年 / 82卷 / 1-2期

关键词：

D O I：

10.1016/0022-5088(81)90211-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：143 / 148

页数：6

共 18 条

[1]

Berezin A. A., 1973, Soviet Physics - Solid State, V15, P1298

[2]

Berezin A. A., 1973, Soviet Physics - Solid State, V15, P1237

[3]

Berezin A. A., 1977, Boron and refractory borides, P52

[4] STUDIES OF A CONDUCTIVITY MECHANISM OF BETA-RHOMBOHEDRAL BORON IN A STRONG ELECTRIC-FIELD [J].

BEREZIN, AA ;

GOLIKOVA, OA ;

KAZANIN, MM ;

TKALENKO, EN ;

ZAITSEV, VK .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :447-458

[5] RADIATIVE TUNNEL TRANSITIONS IN THE HOPPING CONDUCTION IN DOPED SEMICONDUCTORS IN A STRONG ELECTRIC-FIELD [J].

BEREZIN, AA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (32) :L947-L949

[6] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS BORON AND AMORPHOUS CONCEPT FOR BETA-RHOMBOHEDRAL BORON [J].

BEREZIN, AA ;

GOLIKOVA, OA ;

KAZANIN, MM ;

KHOMIDOV, T ;

MIRLIN, DN ;

PETROV, AV ;

UMAROV, AS ;

ZAITSEV, VK .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 16 (02) :237-246

[7] BORON AND BORON-BASED SEMICONDUCTORS [J].

GOLIKOVA, OA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01) :11-40

[8]

GOLIKOVA OA, 1980, SOV PHYS SEMICOND+, V14, P49

[9] BETA-BORON AND ALB12 AS QUASI-AMORPHOUS SEMICONDUCTORS AND THERMOELECTRICAL MATERIALS [J].

GOLIKOVA, OA ;

BEREZIN, AA ;

ZAITSEV, VK ;

KAZANIN, MM ;

ORLOV, VM ;

STILBANS, LS ;

TKALENKO, EN .

JOURNAL OF THE LESS-COMMON METALS, 1976, 47 (JUN) :129-133

[10] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .4. ANDERSON LOCALIZATION IN A DISORDERED LATTICE [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (175) :7-&

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