DISLOCATION-RELATED ELECTROLUMINESCENCE AT ROOM-TEMPERATURE IN PLASTICALLY DEFORMED SILICON

被引：130

作者：

KVEDER, VV

STEINMAN, EA

SHEVCHENKO, SA

GRIMMEISS, HG

机构：

[1] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

[2] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.10520

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dislocation-related photoluminescence and electroluminescence properties have been studied in heavily dislocated silicon crystals between about 2 K and room temperature. A model explaining the high-temperature stability of the D1 luminescence is suggested and considerations concerning the nature of the D1 centers are presented. The experimental results are in good agreement with these models. In particular, forward-biased diodes exhibited an intense structureless luminescence band at 1.55 μm which clearly originated from the D1 centers. © 1995 The American Physical Society.

引用

页码：10520 / 10526

页数：7

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