HYDROGEN IN AMORPHOUS-SEMICONDUCTORS

被引:57
作者
KNIGHTS, JC [1 ]
LUCOVSKY, G [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1980年 / 9卷 / 03期
关键词
D O I
10.1080/10408438008243572
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:211 / 283
页数:73
相关论文
共 208 条
[1]   DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].
ADLER, D .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758
[2]   VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE [J].
ALBEN, R ;
WEAIRE, D ;
SMITH, JE ;
BRODSKY, MH .
PHYSICAL REVIEW B, 1975, 11 (06) :2271-2296
[3]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[4]   IMPORTANCE OF ARGON PRESSURE IN THE PREPARATION OF RF-SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS [J].
ANDERSON, DA ;
MODDEL, G ;
PAESLER, MA ;
PAUL, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :906-912
[5]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS-CARBON PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :17-26
[6]  
ANDERSON DA, 1977, 7TH P INT C AM LIQ S, P334
[7]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[8]  
AST D, 1979, I PHYS C SER, V43, P9
[9]  
AST D, 1979, I PHYS C SER, V43, P115
[10]   HYDROGEN-ATOM INITIATED DECOMPOSITION OF MONOSILANE [J].
AUSTIN, ER ;
LAMPE, FW .
JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (26) :2811-2817