THEORY OF EFFECTIVE G-FACTORS IN TERNARY SEMICONDUCTORS - APPLICATION TO PB1-XSNXTE

被引:25
作者
HOTA, RL
TRIPATHI, GS
机构
[1] Dept. of Phys., Berhampur Univ., Orissa
关键词
D O I
10.1088/0953-8984/3/33/009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effective g-factor, obtained from the spin contribution to the Knight shift, is calculated from first principles for ternary semiconductors and applied to Pb(1-x)Sn(x)Te. A six-level k . pi-theory, within the framework of the effective-mass representation, is used to calculate the effective g-factor as a function of carrier density, tin concentration and temperature. The temperature and concentration dependence of the energy gap is used via the virtual-crystal approximation. The agreement with the available experiments is good, and the trends and results obtained are in overall conformity with that found in the experiments.
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页码:6299 / 6311
页数:13
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