AMORPHOUS THIN-FILM SOLAR-CELLS

被引:12
作者
KRUHLER, W
机构
[1] Siemens AG, Corporate Research and Development, München 83, W-8000
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 01期
关键词
D O I
10.1007/BF00323435
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This report gives an overview of the present status of thin-film solar cells made from hydrogenated amorphous semiconductors (a-Si:H, a-Ge:H) together with new results emphasizing the physics of amorphous materials and devices. Preparation techniques, quality and performances of a-Si:H and a-Ge:H films as well as solar cells with pin structures are reviewed. Dark and light current-voltage I(V) characteristics and spectral response measurements give information about photovoltaic diodes and allow further insights into the physics of these kinds of materials and solar cells. Simulation calculations and device modelling of such solar cells have increased our understanding of amorphous semiconductors and their devices. The introduction of pin/pin stacked and/or tandem structures has improved the long-term stability and conversion efficiency of amorphous solar cells.
引用
收藏
页码:54 / 61
页数:8
相关论文
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