SUBSTRATE-TEMPERATURE EFFECTS ON (3-SQUARE-ROOT X 3-SQUARE-ROOT)R30-DEGREES DOMAIN GROWTH OF AG ON SI(111) SURFACE

High-resolution LEED angular profiles associated with (square-root 3 x square-root 3)R30-degrees domain growth of Ag on Si(111) have been analyzed following Ag deposition as a function of substrate temperature. We found that the square-root 3 domain size distribution has the same Gamma distribution at different coverages and substrate temperatures. However, at higher substrate temperatures the square-root 3 structure grows with coverage primarily by domain coalescence as indicated by the considerable increase in the mean and width of the size distribution. As a result, scaling, i.e. self-similar domain growth, is observed. At lower substrate temperatures the square-root 3 structure grows with coverage by simply increasing the number of small, randomly nucleated domains. Hence, the domain size distribution at low temperatures is narrow and varies little with coverage.