GAAS SCHOTTKY-BARRIER GATE CCD

被引：0

作者：

DEYHIMY, I ^{[1
]}

HARRIS, JS ^{[1
]}

EDWALL, DD ^{[1
]}

EDEN, RC ^{[1
]}

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期

关键词：

D O I：

10.1109/T-ED.1978.19338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1356 / 1356

页数：1

共 50 条

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[38] THE RELIABILITY OF SCHOTTKY-BARRIER RESTRICTED GAAS/GAALAS LEDS [J].

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[39] UNPINNED SCHOTTKY-BARRIER FORMATION AT METAL GAAS INTERFACES [J].

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