GAAS SCHOTTKY-BARRIER GATE CCD

被引：0
作者：
DEYHIMY, I [1 ]
HARRIS, JS [1 ]
EDWALL, DD [1 ]
EDEN, RC [1 ]
机构：
[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期
关键词：
D O I：
10.1109/T-ED.1978.19338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1356 / 1356
页数：1
相关论文
共 50 条
[1]   SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC [J].
HASHIZUME, N ;
YAMADA, H ;
TOMIZAWA, K .
ELECTRONICS LETTERS, 1981, 17 (01) :51-52
[2]   SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC [J].
HASHIZUME, N ;
YAMADA, H ;
KOJIMA, T ;
MATSUMOTO, K .
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63) :557-562
[3]   GAAS SCHOTTKY-BARRIER GATE FET FABRICATION TECHNIQUE [J].
UCHIDA, M ;
IDA, M ;
SATO, Y .
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1975, 23 (11-1) :1175-1181
[4]   SPEED-POWER PROPERTY OF GAAS SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE FET LOGIC [J].
TOMIZAWA, K ;
HASHIZUME, N ;
MATSUMOTO, K ;
SUZUKI, F .
ELECTRONICS LETTERS, 1981, 17 (21) :821-822
[5]   T-SHAPED SCHOTTKY-BARRIER GATE GAAS FET [J].
ASAI, K ;
SUGETA, T ;
IDA, M ;
FUJIMOTO, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (01) :K7-&
[6]   HIGH-EFFICIENCY GAAS SCHOTTKY-BARRIER GATE FET OSCILLATOR [J].
SAUTEREAU, JF ;
GRAFFEUIL, J ;
TANTRARONGROJ, K ;
ROSSEL, P .
ELECTRONICS LETTERS, 1980, 16 (13) :490-492
[7]   STUDIES OF ALUMINUM SCHOTTKY-BARRIER GATE ANNEALING ON GAAS FET STRUCTURES [J].
SLEGER, K ;
CHRISTOU, A .
SOLID-STATE ELECTRONICS, 1978, 21 (04) :677-684
[8]   SCHOTTKY-BARRIER ELLIPSOMETRIC ELECTROREFLECTANCE IN GAAS [J].
TACHI, S ;
MORITANI, A ;
NAKAI, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5461-5471
[9]   CVD WSIX/GAAS SCHOTTKY-BARRIER [J].
HARA, T ;
SUGA, A ;
ICHIKAWA, R ;
YAMAI, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) :C538-C538
[10]   GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS [J].
CALVIELLO, JA .
MICROWAVE JOURNAL, 1979, 22 (09) :92-&
12345