GAAS SCHOTTKY-BARRIER GATE CCD

被引：0

作者：

DEYHIMY, I ^{[1
]}

HARRIS, JS ^{[1
]}

EDWALL, DD ^{[1
]}

EDEN, RC ^{[1
]}

机构：

[1] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期

关键词：

D O I：

10.1109/T-ED.1978.19338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1356 / 1356

页数：1

共 50 条

[1] SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC
HASHIZUME, N
YAMADA, H
KOJIMA, T
MATSUMOTO, K
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 557 - 562
[2] SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC
HASHIZUME, N
YAMADA, H
TOMIZAWA, K
ELECTRONICS LETTERS, 1981, 17 (01) : 51 - 52
[3] GAAS SCHOTTKY-BARRIER GATE FET FABRICATION TECHNIQUE
UCHIDA, M
IDA, M
SATO, Y
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1975, 23 (11-1): : 1175 - 1181
[4] SPEED-POWER PROPERTY OF GAAS SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE FET LOGIC
TOMIZAWA, K
HASHIZUME, N
MATSUMOTO, K
SUZUKI, F
ELECTRONICS LETTERS, 1981, 17 (21) : 821 - 822
[5] T-SHAPED SCHOTTKY-BARRIER GATE GAAS FET
ASAI, K
SUGETA, T
IDA, M
FUJIMOTO, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (01): : K7 - &
[6] HIGH-EFFICIENCY GAAS SCHOTTKY-BARRIER GATE FET OSCILLATOR
SAUTEREAU, JF
GRAFFEUIL, J
TANTRARONGROJ, K
ROSSEL, P
ELECTRONICS LETTERS, 1980, 16 (13) : 490 - 492
[7] STUDIES OF ALUMINUM SCHOTTKY-BARRIER GATE ANNEALING ON GAAS FET STRUCTURES
SLEGER, K
CHRISTOU, A
SOLID-STATE ELECTRONICS, 1978, 21 (04) : 677 - 684
[8] SCHOTTKY-BARRIER ELLIPSOMETRIC ELECTROREFLECTANCE IN GAAS
TACHI, S
MORITANI, A
NAKAI, J
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5461 - 5471
[9] CVD WSIX/GAAS SCHOTTKY-BARRIER
HARA, T
SUGA, A
ICHIKAWA, R
YAMAI, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (11) : C538 - C538
[10] GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
CALVIELLO, JA
MICROWAVE JOURNAL, 1979, 22 (09) : 92 - &

← 1 2 3 4 5 →