TEMPERATURE AND ELECTRIC-FIELD DEPENDENCE OF THE PICOSECOND ELECTRON-DRIFT VELOCITY IN A-SI-H

被引：25

作者：

DEVLEN, RI

TAUC, J

SCHIFF, EA

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

[2] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90652-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：567 / 569

页数：3

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[5] PICOSECOND NON-EQUILIBRIUM CARRIER TRANSPORT IN GAAS [J].

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[6]

SPEAR WE, 1989, AMORPHOUS SILICON RE, VB, P721

[7]

TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49

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