NITRIDATION-ENHANCED CONDUCTIVITY BEHAVIOR AND CURRENT TRANSPORT MECHANISM IN THIN THERMALLY NITRIDED SIO2

被引:80
|
作者
CHENG, XR
CHENG, YC
LIU, BY
机构
关键词
D O I
10.1063/1.340072
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:797 / 802
页数:6
相关论文
共 50 条
  • [1] CHARGE TRANSPORT THROUGH LAYERS OF THERMALLY NITRIDED SIO2
    EFIMOV, VM
    ESAEV, DG
    MEERSON, EE
    LOGVINSKII, LM
    PEROV, GN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 98 (01): : 319 - 327
  • [2] ELECTRICAL-CONDUCTION IN THIN THERMALLY NITRIDED SIO2 (NITROXIDE)
    CHENG, XR
    LIU, BY
    CHENG, YC
    APPLIED SURFACE SCIENCE, 1987, 30 (1-4) : 237 - 243
  • [3] DISTRIBUTION OF NITROGEN IN THERMALLY NITRIDED SIO2
    YORIUME, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 67 - 71
  • [4] Interface nitridation model of the rapid thermal nitrided SiO2 film
    Chen, Pusheng
    Wang, Yunxiang
    Wang, Yue
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 1995, 15 (01): : 71 - 79
  • [5] SUPERFICIAL-ENHANCED THERMAL NITRIDATION OF SIO2 THIN-FILMS
    GLACHANT, A
    BALLAND, B
    RONDA, A
    BUREAU, JC
    PLOSSU, C
    JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 413 - 416
  • [6] THE INFLUENCE OF PROCESSES ON COMPOSITION OF THERMALLY NITRIDED SIO2 FILM
    LIU, BY
    CHENG, YC
    LIU, ZH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) : 3081 - 3086
  • [7] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
    ITO, T
    NAKAMURA, T
    ISHIKAWA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 184 - 188
  • [8] EFFECT OF THERMALLY NITRIDED SIO2 THICKNESS ON MIS CHARACTERISTICS
    SEVERI, M
    DORI, L
    IMPRONTA, M
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 3 - 5
  • [9] Oxygen-deficiency centers in SiO2 thermally nitrided in NO
    Tello, PG
    Afanas'ev, VV
    Stesmans, A
    MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) : 81 - 84
  • [10] Thermally stimulated current in SiO2
    Fleetwood, DM
    Reber, RA
    Riewe, LC
    Winokur, PS
    MICROELECTRONICS RELIABILITY, 1999, 39 (09) : 1323 - 1336