GERMANIUM AND SILICON RECTIFIERS

被引:5
作者
HENKELS, HW
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期
关键词
D O I
10.1109/JRPROC.1958.286891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1086 / 1098
页数:13
相关论文
共 59 条
[1]  
[Anonymous], 1939, WISS VEROFF SIEMENS
[2]   THEORY OF THE FORWARD CHARACTERISTIC OF INJECTING POINT CONTACTS [J].
BANBURY, PC .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (406) :833-840
[3]   ON THE THEORY OF THE A-C IMPEDANCE OF A CONTACT RECTIFIER [J].
BARDEEN, J .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :428-434
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]  
BECHTOLD WF, 1957, AIEE57795 TECH PAP
[6]   HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS [J].
BENZER, S .
JOURNAL OF APPLIED PHYSICS, 1949, 20 (08) :804-815
[7]   CHARACTERISTICS OF COMPOUND BARRIER LAYER RECTIFIERS [J].
BILLIG, E ;
LANDSBERG, PT .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION A, 1950, 63 (362) :101-111
[8]   RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS [J].
BORNEMAN, EH ;
SCHWARZ, RF ;
STICKLER, JJ .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (08) :1021-1028
[9]   THE SURFACE-BARRIER TRANSISTOR .1. PRINCIPLES OF THE SURFACE-BARRIER TRANSISTOR [J].
BRADLEY, WE .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1702-1706
[10]   NATURE OF THE FORWARD CURRENT IN GERMANIUM POINT CONTACTS [J].
BRATTAIN, WH ;
BARDEEN, J .
PHYSICAL REVIEW, 1948, 74 (02) :231-232