EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE

被引:89
作者
GRUNTHANER, FJ
MASERJIAN, J
机构
关键词
D O I
10.1109/TNS.1977.4329175
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2108 / 2112
页数:5
相关论文
共 13 条
[1]  
BARTON JC, UNPUBLISHED
[2]  
GRUNTHANER FJ, 1976, 1ST IEEE NON VOL SEM
[3]  
GRUNTHANER FJ, 1975, NBS40023 SPEC PUBL, P151
[4]   LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J].
HARRINGTON, WL ;
HONIG, RE ;
GOODMAN, AM ;
WILLIAMS, R .
APPLIED PHYSICS LETTERS, 1975, 27 (12) :644-645
[5]  
HILL JM, 1976, 23RD NAT S AM VAC SO
[6]  
HOWARD JK, 1976, 23RD NAT S AM VAC SO
[7]   PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY [J].
JOHANNESSEN, JS ;
SPICER, WE ;
STRAUSSER, YE .
APPLIED PHYSICS LETTERS, 1975, 27 (08) :452-454
[8]   SILICON LATTICE CONSTRAINTS ON STRUCTURE OF INTERFACE STATES [J].
MAIER, RJ .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1558-1562
[9]   RADIATION-INDUCED DEFECT CENTERS IN THERMALLY GROWN OXIDE-FILMS [J].
MARQUARDT, CL ;
SIGEL, GH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2234-2239
[10]   ORIGIN OF INTERFACE STATES AND OXIDE CHARGES GENERATED BY IONIZING-RADIATION [J].
SAH, CT .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1563-1568