SIGE GATE OXIDE PREPARED AT LOW-TEMPERATURE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA

SiGe gate oxide prepared at low temperatures (25-400-degrees-C) by electron cyclotron resonance (ECR) plasma is reported. 100-200 angstrom oxides were grown on Si0.8Ge0.2 substrates by ECR oxidation under different bias conditions. The electrical properties of the ECR grown oxides are strong functions of processing conditions and post-processing treatments. High frequency (1 MHz) and quasistatic capacitance-voltage ECR grown oxides' measurements indicate that device quality gate oxides can be produced by this process; specifically, the fixed charge and interface state densities are comparable to those of ECR grown metal-oxide-semiconductor capacitors on silicon with an aluminum gate.