OPTICAL AND ELECTRICAL-PROPERTIES OF P-GASE DOPED WITH SB (VOL 32, PG 2731, 1993)

被引：0
作者：
SHIGETOMI, S
IKARI, T
NISHIMURA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4042 / 4042
页数：1
相关论文
共 50 条
  • [41] INVESTIGATION OF INSE-GASE HETEROJUNCTIONS FORMED BY OPTICAL CONTACT .1. ELECTRICAL-PROPERTIES OF THE JUNCTIONS IN DARKNESS
    BAKUMENKO, VL
    KOVALYUK, ZD
    KURBATOV, LN
    TAGAEV, VG
    CHISHKO, VF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (06): : 661 - 663
  • [42] OPTICAL AND ELECTRICAL-PROPERTIES OF RADIO-FREQUENCY SPUTTERED TIN OXIDE-FILMS DOPED WITH OXYGEN VACANCIES, F, SB, OR MO
    STJERNA, B
    OLSSON, E
    GRANQVIST, CG
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3797 - 3817
  • [43] Optical and electrical characteristics of layered semiconductor p-InSe doped with Sb
    Shigetomi, S
    Ikari, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (11): : 6951 - 6954
  • [44] Transport and optical properties of the layer semiconductor p-type GaSe doped with Li
    Shigetomi, S
    Ikari, T
    PHILOSOPHICAL MAGAZINE LETTERS, 1999, 79 (08) : 575 - 579
  • [45] ELECTRICAL-PROPERTIES OF IRRADIATED GADOLINIUM-DOPED P-TYPE SI
    ANTONENKO, RS
    KARPOV, YA
    SHAKHOVTSOV, VI
    SHINDICH, VL
    SHPINAR, LI
    YASKOVETS, II
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (09): : 1011 - 1014
  • [46] ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE DOPED WITH ISOVALENT IMPURITIES (GAAS-SB, GAAS-IN)
    SOLOVEVA, EV
    RYTOVA, NS
    MILVIDSKII, MG
    GANINA, NV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1243 - 1246
  • [47] SEM EBIC STUDY OF ELECTRICAL-PROPERTIES IN BULK AND AT GRAIN-BOUNDARIES IN SB-DOPED GERMANIUM
    TABET, N
    MONTY, C
    REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (06): : 156 - 156
  • [48] Optical properties of bismuth oxide thin films prepared by reactive d.c. magnetron sputtering onto p-GaSe (Cu)
    Leontie, Liviu
    Caraman, M.
    Evtodiev, Igor
    Cuculescu, Elmira
    Mija, Ana
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (08): : 2052 - 2056
  • [49] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI
    HASEGAWA, S
    NARIKAWA, S
    KURATA, Y
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05): : 431 - 447
  • [50] ELECTRICAL-PROPERTIES OF MN-DOPED AND SM-DOPED GASB AND EUTECTICS MN0.6GA0.4SB
    ALIEV, MI
    SAFARALIEV, GI
    DADASHEV, IS
    GULIEV, AN
    INORGANIC MATERIALS, 1976, 12 (01) : 27 - 29
12345