OPTICAL AND ELECTRICAL-PROPERTIES OF P-GASE DOPED WITH SB (VOL 32, PG 2731, 1993)

被引：0
|
作者：
SHIGETOMI, S
IKARI, T
NISHIMURA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9A期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4042 / 4042
页数：1
相关论文
共 50 条
  • [1] Optical and electrical properties of p-GaSe doped with Sb
    Shigetomi, Shigeru
    Ikari, Tetsuo
    Nishimura, Hideki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (6 A): : 2731 - 2734
  • [2] OPTICAL AND ELECTRICAL-PROPERTIES OF LAYER SEMICONDUCTOR P-GASE DOPED WITH ZN
    SHIGETOMI, S
    IKARI, T
    NAKASHIMA, H
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 4125 - 4129
  • [3] Optical and electrical properties of p-GaSe doped with in
    Shigetomi, Shigeru
    Ikari, Tetsuo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9A): : 5774 - 5776
  • [4] Optical and electrical properties of layer semiconductor p-GaSe doped with Zn
    Shigetomi, S.
    Ikari, T.
    Nakashima, H.
    Journal of Applied Physics, 1993, 74 (06): : 4125 - 4129
  • [5] Optical and electrical characteristics of p-GaSe doped with Te
    Shigetomi, S
    Ikari, T
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) : 6480 - 6482
  • [6] Electrical properties of layer semiconductor p-GaSe doped with Cu
    Shigetomi, S
    Ikari, T
    Nakashima, H
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) : 4779 - 4781
  • [7] Optical properties of p-GaSe single crystals doped with Te
    Evtodiev, I.
    Leontie, L.
    Caraman, M.
    Stamate, M.
    Arama, E.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)
  • [8] Electrical and optical characteristics of the layer semiconductor p-GaSe doped with Ag
    Shigetomi, S
    Ikari, T
    Nakashima, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 160 (01): : 159 - 164
  • [9] OPTICAL AND ELECTRICAL-PROPERTIES OF P-GAAE DOPED WITH SB
    SHIGETOMI, S
    IKARI, T
    NISHIMURA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6A): : 2731 - 2734
  • [10] Electrical properties of Au-Sb/p-GaSe:Gd Schottky barrier diode
    Duman, Songul
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 12 (06) : 243 - 247
12345