ELECTRON-STATES IN HEAVILY DOPED SEMICONDUCTORS

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 815 - +

[3] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) : 1099 - 1210

[4] EXTRINSIC HEAT-CAPACITY IN METALLIC REGIME OF HEAVILY DOPED SILICON AND GERMANIUM [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2631 - 2639

[5] BERGGREN KF, 1978, METAL NONMETAL TRANS

[6] BERGGREN KF, 1976, J PHYSIQUE S10, V37, P317

[7] SINGLE-PARTICLE EXCITATIONS IN MAGNETIC INSULATORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (05): : 1324 - +

[8] OBSERVATION OF A DONOR EXCITON BAND IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (09) : 611 - 616

[9] CAPIZZI M, 1978, PHYSICS SEMICONDUCTO, P957

[10] Castellan G. W., 1951, SEMICONDUCTING MATER, P8

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 815 - +

[3] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) : 1099 - 1210

[4] EXTRINSIC HEAT-CAPACITY IN METALLIC REGIME OF HEAVILY DOPED SILICON AND GERMANIUM [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2631 - 2639

[5] BERGGREN KF, 1978, METAL NONMETAL TRANS

[6] BERGGREN KF, 1976, J PHYSIQUE S10, V37, P317

[7] SINGLE-PARTICLE EXCITATIONS IN MAGNETIC INSULATORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (05): : 1324 - +

[8] OBSERVATION OF A DONOR EXCITON BAND IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (09) : 611 - 616

[9] CAPIZZI M, 1978, PHYSICS SEMICONDUCTO, P957

[10] Castellan G. W., 1951, SEMICONDUCTING MATER, P8