OBSERVATION OF THE TRACK OF A MISFIT DISLOCATION IN ORDERED GA0.5IN0.5P

被引：9
作者：
BAXTER, CS [1 ]
STOBBS, WM [1 ]
GIBBINGS, CJ [1 ]
机构：
[1] BT LABS,IPSWICH IP5 7RE,ENGLAND
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1993年 / 67卷 / 01期
关键词：
D O I：
10.1080/09500839308240491
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have found that a misfit dislocation which moves within a slightly strained layer of Ga0.5In0.5P with atomic ordering on {111BAR} planes leaves an observable track in the form of an antiphase domain boundary. Here we describe our observations and discuss the possibility of using this material as a model system for the investigation of strain relaxation mechanisms.
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页码：59 / 65
页数：7
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