THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES

被引：165

作者：

FLETCHER, NH

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1957年 / 45卷 / 06期

关键词：

D O I：

10.1109/JRPROC.1957.278485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：862 / 872

页数：11

共 25 条

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