BEHAVIOR OF ELECTRICALLY SMALL DEPLETION MODE MOSFETS AT LOW-TEMPERATURE

被引：12
|
作者：
GAENSSLEN, FH [1 ]
JAEGER, RC [1 ]
机构：
[1] AUBURN UNIV,DEPT ELECT ENGN,AUBURN,AL 36830
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 03期
关键词：
D O I：
10.1016/0038-1101(81)90084-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：215 / 220
页数：6
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