DISPERSION-RELATION IN N-CHANNEL INVERSION-LAYERS ON A11-3BV2 SEMICONDUCTORS

被引：1
作者：
BISWAS, SN [1 ]
GHATAK, KP [1 ]
机构：
[1] JADAVPUR UNIV,FAC ENGN & TECHNOL,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1990年 / 68卷 / 06期
关键词：
D O I：
10.1080/00207219008921235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An attempt is made to derive the two-dimensional electron dispersion relations in n-channel inversion layers on A311B2V semiconductors under both the weak and strong electric field limits, by including various anisotropies in the energy band structure within the framework of the k • p formalism. In addition, the corresponding well known results of the isotropic two-band Kane model are also obtained from our generalized results under certain limiting conditions. © 1990 Taylor and Francis Ltd.
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页码：957 / 960
页数：4
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